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20aQE-1 Critical concentration of superconductor-insulator transition in (111), (001), (110) heavily boron-doped diamond
20aQE-1 (111),(001),(110)高濃度ボロンドープダイヤモンド薄膜の超伝導絶縁体転移の臨界濃度(20aQE ダイヤモンド・Si超伝導,領域8(強相関系:高温超伝導,強相関f電子系など))
2008
Meeting Abstracts of the Physical Society of Japan (Nihon Butsuri Gakkai koen gaiyoshu)
20aQE-1 (111),(001),(110)高濃度ボロンドープダイヤモンド薄膜の超伝導絶縁体転移の臨界濃度(20aQE ダイヤモンド・Si超伝導,領域8(強相関系:高温超伝導,強相関f電子系など))
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