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The barrier height of Schottky diodes made on In x Ga 1−x N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type ͑001͒ silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are ϳ1 m, 20 nm, and 1 ϫ 10 11 cm −2 . The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height ⌽ B varies from 1.4 eV ͑GaN͒ todoi:10.1063/1.3579143 fatcat:jv7pl45rbbgmdlvhdqz7q4yvfu