Barrier height of Pt–InxGa1−xN (0≤x≤0.5) nanowire Schottky diodes

Wei Guo, Animesh Banerjee, Meng Zhang, Pallab Bhattacharya
2011 Applied Physics Letters  
The barrier height of Schottky diodes made on In x Ga 1−x N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type ͑001͒ silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are ϳ1 m, 20 nm, and 1 ϫ 10 11 cm −2 . The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height ⌽ B varies from 1.4 eV ͑GaN͒ to
more » ... 4 eV ͑In 0.5 Ga 0.5 N͒ and agrees well with the ideal barrier heights in the Schottky limit.
doi:10.1063/1.3579143 fatcat:jv7pl45rbbgmdlvhdqz7q4yvfu