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Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide
2004
Applied Physics Letters
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Acceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS). Because of its high concentration and low ionization energy, a level at E V + 34 meV is found to be the important acceptor responsible for the p-type conduction of the samples. Two different kinds of V Ga -related defects (lifetimes of 280 ps and 315 ps, respectively) having different microstructures were
doi:10.1063/1.1773934
fatcat:3pyrkba65rahxcjhhnmdcrs67u