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Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films
1998
Journal of Applied Physics
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We have studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHfSiO thin granular films. Maximum magnetoresistance ratios at room temperature of 2% and 3.2% were observed for films with compositions of Fe 47 Hf 10 O 43 and Fe 40 Hf 6 Si 6 O 48 , respectively. The magnetoresistance shows a decrease with temperature, which cannot be explained by spin-dependent tunneling only. We propose that spin-flip scattering in the amorphous FeHf͑Si͒O matrix causes
doi:10.1063/1.368443
fatcat:g2wt5fyfjffann2zksa3ek77hq