A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2012; you can also visit the original URL.
The file type is application/pdf
.
Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy
2000
Journal of Applied Physics
The surface roughness of gallium arsenide ͑001͒ films produced by metalorganic vapor-phase epitaxy has been studied as a function of temperature and growth rate by in situ scanning tunneling microscopy. Height-height correlation analysis reveals that the root-mean-height difference follows a power-law dependence on lateral separation, i.e., ⌫(L)ϭkL a , up to a critical distance L c , after which it remains constant. For layer-by-layer growth, the roughness exponent, ␣, equals 0.25 Ϯ0.05,
doi:10.1063/1.373687
fatcat:yermrq5wgnbxfggqzvnb7rlxje