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Carrier Lifetimes in aIII−V−NIntermediate-Band Semiconductor
2017
Physical Review Applied
We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a function of time after an excitation pulse. Following photoexcitation of GaP0.32As0.67N0.01 we find that the electron population in the conduction band decays exponentially with a time constant 23ps. The electron population in the intermediate band exhibits
doi:10.1103/physrevapplied.7.014016
fatcat:tfpqrwkbmre7lkdizgq4he2w4q