Drain current response delay of FD-SOI MOSFETs in RF operation

Yoshiyuki Shimizu, Gue Chol Kim, Bunsei Murakami, Keisuke Ueda, Yoshihiro Utsurogi, Sungwoo Cha, Toshimasa Matsuoka, Kenji Taniguchi
2004 IEICE Electronics Express  
We investigated the frequency dependences of Y 22 of FD-SOI MOSFETs, in which the drain current response delay is observed for the first time. Short channel FD-SOI devices operating in linear region show significant drain current response delay. It is confirmed that FD-SOI MOSFET's RF behavior can be well reproduced with the proposed model including the drain current response delay.
doi:10.1587/elex.1.518 fatcat:y7cimw64a5bmtjckzxxl6leltm