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SnO2-Pd as a Gate Material for the Capacitor Type Gas Sensor
2019
Proceedings (MDPI)
The article describes the result of the use SnO2-Pd thin films as a gate for structure measured ppb range of NO2 gas by the capacitive method. The technological aspects of fabrication SnO2-Pd gate and one comparison by metrological parameters with the classical Pd gate field effect sensor are discussed. The use of SnO2-Pd material allows improvement in sensitivity of NO2 by an order of magnitude compare the classical Pd based gate field effect sensors.
doi:10.3390/proceedings2019014010
fatcat:xr73tigeovdblm7q6fxhwttuly