A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2003; you can also visit the original URL.
The file type is application/pdf
.
Phonon-assisted photoluminescence in wurtzite GaN epilayer
1998
Optoelectronic Materials and Devices
Temperature-dependent photoluminescence of a wurtzite GaN epilayer was measured in the range of 4 to 300 K. At low temperature, the neutral-donor bound exciton emission dominates the spectra, while with increasing temperature, free exciton emissions grow rapidly and finally become the dominant lines. The contribution of the exciton-phonon interaction to the exciton linewidth was studied. Beside the exciton emissions, LO-phonon-assisted photoluminescence associated with both the bound exciton
doi:10.1117/12.311027
fatcat:erejtu5tmbejrhukps4yfluidq