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Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon
2022
Nanomaterials
Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technology. To achieve high performance OEICs, the crystal quality of the group III-V epitaxial layer plays an extremely vital role. However, there are several challenges for high quality group III-V material growth on Si, such as a large lattice mismatch,
doi:10.3390/nano12050741
pmid:35269230
pmcid:PMC8912022
fatcat:2szyd5ecinc7re5qflymwqucvi