Improvement of the Electrical Properties of β-FeSi 2 Films on Si (001) by High-Temperature Annealing

Ken-ichiro Takakura, Takashi Suemasu, Noriyoshi Hiroi, Fumio Hasegawa
2000 Japanese Journal of Applied Physics  
The crystal quality, mobility and carrier density of the continuous and [100]-oriented nondoped β-FeSi 2 films prepared from Si/Fe multilayers on Si (001) substrates using templates were improved by high-temperature annealing, in particular, at 900 • C. All the annealed samples exhibited n-type conduction. The maximum electron mobility of β-FeSi 2 indicated 6900 cm 2 /V·s (46 K) after annealing at 900 • C for 42 h. This mobility is about 15 times higher than that reported so far for nondoped
more » ... ype β-FeSi 2 . The electron density at room temperature decreased from 2×10 20 cm −3 to 3 × 10 18 cm −3 after the annealing.
doi:10.1143/jjap.39.l233 fatcat:4yo437ngbvghja3po5f7vtungu