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Femtosecond Pulsed Laser Deposition of Indium on Si(100)
2006
Journal of Laser Micro/Nanoengineering
Deposition of indium on Si(100) substrates is performed under ultrahigh vacuum with an amplified Ti:sapphire laser (130 fs) at wavelength of 800 nm and laser fluence of 0.5 J/cm 2 . Indium films are grown at room temperature and at higher substrate temperatures with a deposition rate of ~ 0.05 ML/pulse. Reflection high-energy electron diffraction (RHEED) is used during the deposition to study the growth dynamics and the surface structure of the grown films. The morphology of the grown films is
doi:10.2961/jlmn.2006.01.0009
fatcat:7xbwc5bvxbdtvnm4udflz6gbe4