Femtosecond Pulsed Laser Deposition of Indium on Si(100)

Hani Elsayed-Ali
2006 Journal of Laser Micro/Nanoengineering  
Deposition of indium on Si(100) substrates is performed under ultrahigh vacuum with an amplified Ti:sapphire laser (130 fs) at wavelength of 800 nm and laser fluence of 0.5 J/cm 2 . Indium films are grown at room temperature and at higher substrate temperatures with a deposition rate of ~ 0.05 ML/pulse. Reflection high-energy electron diffraction (RHEED) is used during the deposition to study the growth dynamics and the surface structure of the grown films. The morphology of the grown films is
more » ... xamined by ex situ atomic force microscopy (AFM). At room temperature indium is found to form epitaxial two-dimensional layers on the Si(100)-(2×1) surface followed by threedimensional islands. AFM images show different indium island morphologies such as hexagonal and elongated shapes. At substrate temperatures of 400-420 o C, RHEED intensity oscillations are observed during film growth indicating that the indium film grows in the layer-by-layer mode.
doi:10.2961/jlmn.2006.01.0009 fatcat:7xbwc5bvxbdtvnm4udflz6gbe4