Time evolution of self-heating and current filamentation are discussed in this paper for shallow-trench-isolation (STI)type drained-enhanced n-channel metal-oxide-semiconductor (DeNMOS) devices. A deeper insight toward regenerative n-p-n action and its impact over various phases of filamentation and the final thermal runaway is presented. A modified STI-type DeNMOS device is proposed in order to achieve an improvement (∼2×) in the failure threshold (I T 2 ) and electrostatic discharge (ESD)

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... ow (V T 2 ). The performance and filament behavior of the standard device under charge-device-model-like ESD conditions is also presented, which is further compared with the proposed modified device. Index Terms-Base push-out, charge device model (CDM), current filamentation, drain-enhanced metal-oxide-semiconductor (DeMOS), electrostatic discharge (ESD), human body model (HBM), input-output (I/O), kirk effect, laterally diffused metaloxide-semiconductor (LDMOS), space charge build-up, thermal runaway, transient interferometric mapping (TIM).