GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates

J. F. Klem, O. Blum, S. R. Kurtz, I. J. Fritz, K. D. Choquette
2000 Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena  
We have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structures grown by molecukir beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer> strains and thicknesses designed to bet hermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 pm. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth
more » ... GaAs/GaAsSb vs. GaAsSb/InGaAs), suggesting that Sb andor In segregation results in non-ideal interfaces under certain growth conditions. At low injection currents, double heterostructure lasers with GaAsSb/InGaAs bilayer quantum well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities as low as 120 . A/cm* at 1.17 pm, and 2.1 kA/cm2 at 1.21 pm.
doi:10.1116/1.591437 fatcat:saolxllydzbwjlhfjl5awfqa3m