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GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates
2000
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
We have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structures grown by molecukir beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer> strains and thicknesses designed to bet hermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 pm. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth
doi:10.1116/1.591437
fatcat:saolxllydzbwjlhfjl5awfqa3m