Edge-emitting lasers based on transitionally dimensional InGaAs/GaAs active region

A S Payusov, Yu M Shernyakov, A A Serin, A M Nadtochiy, S A Mintairov, N A Kalyuzhnyy, M M Kulagina, A E Zhukov, N Yu Gordeev, M V Maximov
2018 Journal of Physics, Conference Series  
We present a systematic study of basic characteristics of edge-emitting lasers based on a new type of quantum-sized InGaAs active medium grown on GaAs substrates. The active region referred to as quantum-well-dots (QWDs) comprises properties of quantum wells (QWs) and quantum dots (QDs). We have fabricated and investigated lasers with the active regions consisted of 1, 2, 5 and 10 layers of the QWDs. The low internal loss has allowed us to obtain maximal optical power as high as 8.8 W in the
more » ... tinuous wave (CW) regime. We have shown that QWD-based active media are very promising for devices requiring high gain, stacking a large number of layers in the active region, and suppressing of lateral carrier transport.
doi:10.1088/1742-6596/1135/1/012071 fatcat:hije5ij73nhttirxrnqf3kur7y