Tin oxide SnO2films were prepared by RF magnetron sputtering. The effects of oxygen partial pressure percentage on the SnO2property have been investigated to obtain relatively high-resistivity SnO2films which could be used as buffer layers to optimize the performance of CdTe/CdS solar cells. The oxygen partial pressure percentage varied in the range of 1%~10%. The results show that the introduction of oxygen would suppress the deposition and growth of SnO2films. Electrical measurement suggests

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... hat the film resistivity decreases with the increase of oxygen pressure. The SnO2films with resistivity of 232 Ω cm were obtained in pure Ar atmosphere. All SnO2films fabricated with different oxygen partial pressure percentage have almost the same optical band gap.