Preparation and Properties of SnO2Film Deposited by Magnetron Sputtering

Dan Leng, Lili Wu, Hongchao Jiang, Yu Zhao, Jingquan Zhang, Wei Li, Lianghuan Feng
2012 International Journal of Photoenergy  
Tin oxide SnO2films were prepared by RF magnetron sputtering. The effects of oxygen partial pressure percentage on the SnO2property have been investigated to obtain relatively high-resistivity SnO2films which could be used as buffer layers to optimize the performance of CdTe/CdS solar cells. The oxygen partial pressure percentage varied in the range of 1%~10%. The results show that the introduction of oxygen would suppress the deposition and growth of SnO2films. Electrical measurement suggests
more » ... hat the film resistivity decreases with the increase of oxygen pressure. The SnO2films with resistivity of 232 Ω cm were obtained in pure Ar atmosphere. All SnO2films fabricated with different oxygen partial pressure percentage have almost the same optical band gap.
doi:10.1155/2012/235971 fatcat:pjpr5ia6f5bv5aynqdaevvdina