Microstructure of Reaction-Bonded Silicon Carbide including Molybdenum Disiliside

Yasuhiro GOTO, Masahiro KATO, Shoko SUYAMA, Tsuneji KAMEDA
2007 Journal of the Ceramic Society of Japan  
Residual silicon in the reaction-bonded silicon carbide RBSiC can be replaced by refractory MoSi 2 by using Si-Mo alloy as infiltrants instead of pure Si. Transmission electron microscopy of these materials clarified the following results. The MoSi 2 existed in the SiC grain boundaries and many fine grains of SiC were found in the MoSi 2 phase. The carbon particles were thought to be dissolved into the Si melt including Mo and reprecipitated as SiC particles in the solution-reprecipitation
more » ... nism. The Mo concentration in the Si-Mo melt increased with the reprecipitation of SiC particles, and the MoSi 2 was precipitated in the grain boundaries. The presence of the fine SiC particles in the MoSi 2 phase suggests that the carbon have a fairly strong interaction with silicon in the melt and diffuse not as isolated atoms, but as C-Si pairs.
doi:10.2109/jcersj2.115.479 fatcat:p745ciktonhxnhcu5hpdokp2wu