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Microstructure of Reaction-Bonded Silicon Carbide including Molybdenum Disiliside
2007
Journal of the Ceramic Society of Japan
Residual silicon in the reaction-bonded silicon carbide RBSiC can be replaced by refractory MoSi 2 by using Si-Mo alloy as infiltrants instead of pure Si. Transmission electron microscopy of these materials clarified the following results. The MoSi 2 existed in the SiC grain boundaries and many fine grains of SiC were found in the MoSi 2 phase. The carbon particles were thought to be dissolved into the Si melt including Mo and reprecipitated as SiC particles in the solution-reprecipitation
doi:10.2109/jcersj2.115.479
fatcat:p745ciktonhxnhcu5hpdokp2wu