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Deformation behavior of undoped and In‐doped GaAs in the temperature range 700–1100 °C
1987
Journal of Applied Physics
Compressive deformation of undoped and In-doped GaAs single crystals has been carried out in [001] and [123] orientations in the temperature range 700-1100 0c. Indium additions, at levels of 1-2 X 10 20 atoms cm -3, result in critical resolved shear stress (CRSS) values that are about twice as large as the undoped crystals in the temperature range of 700-1100 °C. The CRSS was weakly dependent on temperature in the temperature range investigated as expected for a model of athermal solid solution
doi:10.1063/1.339129
fatcat:k7wjvvcwabbuzm7idi4hgj45oq