Enhanced Hall voltage in a gate-controlled InSb Hall device

W. Y. Kim, Joonyeon Chang, S. H. Han, W. Y. Lee, S. G. Chang
2005 Journal of Applied Physics  
We present an enhanced Hall voltage from the gate-controlled Hall device incorporating a micron-scaled InSb semiconductor cross junction and a single ferromagnetic element. Magnetic fringe field at an edge of the ferrogmanetic element gives rise to the Hall voltage, which shows hysteretic behavior upon magnetic-field sweep. The Hall effect is amplified by a factor of ϳ40% when a gate voltage of −25 V is applied. The increase is largely attributed to the reduction of carrier density affected by
more » ... ensity affected by the gate confinement effect. The InSb Hall device controlled by gate voltage demonstrates a possible application for active nonvolatile memory cells and logic gate.
doi:10.1063/1.1855231 fatcat:blsn4cto5raofd43u7kdez6l3a