A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2019; you can also visit the original URL.
The file type is application/pdf
.
Reduced variability of drain-induced barrier lowering and subthreshold slope at high temperature in bulk and silicon-on-thin-buried-oxide (SOTB) MOSFETs
2019
Japanese Journal of Applied Physics
The temperature dependence of the variability of drain-induced barrier lowering (DIBL) and subthreshold slope (SS) is experimentally investigated in bulk and fully depleted silicon-on-thin-buried-oxide MOSFETs. Measurement results show that variability of both DIBL and SS is reduced at high temperature. The origins of these new findings are explained and confirmed by device simulations. It is found that reduced variability of DIBL at high temperature originates from randomness along the channel
doi:10.7567/1347-4065/ab027d
fatcat:mcsbzgeoufcjxbk2zbuo345wry