We report the growth of InGaAs-based epitaxial layers by metallorganic chemical vapor deposition ͑MOCVD͒ and the fabrication of 60 m diameter InGaAs PIN photodiode. With −5 V applied bias, it was found that reverse leakage current and capacitance of the photodiode were only 105 pA and 0.475 pF, respectively. It was also found that measured 3 dB bandwidth for the packaged photodiode was 3.83 GHz when biased at −5 V. For a given bandwidth of 1 kHz and a given bias of −5 V, it was found that the

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... ise-equivalent-powers of our InGaAs PIN photodiodes were 4.53 ϫ 10 −14 W at 1.31 m and 2.95 ϫ 10 −14 W at 1.55 m, which correspond to normalize detectivity values of 3.69 ϫ 10 12 cm Hz 0.5 W −1 at 1.31 m and 5.67 ϫ 10 12 cm Hz 0.5 W −1 at 1.55 m.