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Noise Characteristics of High-Performance InGaAs PIN Photodiodes Prepared by MOCVD
Journal of the Electrochemical Society
We report the growth of InGaAs-based epitaxial layers by metallorganic chemical vapor deposition ͑MOCVD͒ and the fabrication of 60 m diameter InGaAs PIN photodiode. With −5 V applied bias, it was found that reverse leakage current and capacitance of the photodiode were only 105 pA and 0.475 pF, respectively. It was also found that measured 3 dB bandwidth for the packaged photodiode was 3.83 GHz when biased at −5 V. For a given bandwidth of 1 kHz and a given bias of −5 V, it was found that thedoi:10.1149/1.2971026 fatcat:2zjkw7x2xndytb54i24hwzp22e