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In-situ TEM Analyses over FIB Lamellae - Investigating High Temperature Conversion of Solution Processed Mo-precursor to MoS2 Semiconductor Films
2017
Microscopy and Microanalysis
Currently, single layered MoS 2 nanosheets can be obtained by top-down mechanical [1] or chemical exfoliation [2] and bottom-up chemical vapour deposition [3] process. These are difficult for making viable devices either due to their limited lateral size or being expensive respectively. The current state-of-the-art chemical vapour deposition (CVD) used to synthesize MoS 2 requires vacuum and high-purity precursors rendering it expensive and substrate also plays an important role in determining
doi:10.1017/s1431927617001970
fatcat:n7ieluzs35cghejmnfep7mwkne