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Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs are reported for the first time. Channel backscattering ratio increases and decreases under uniaxial tensile and compressive strain, respectively. It is found that in sub-100-nm devices, strain-induced modulation of carrier mean-free path for backscattering and reduction in layer thickness are responsible for the different behaviors of backscattering ratio. Nevertheless, the source-side injection velocity improvesdoi:10.1109/led.2005.853640 fatcat:4j2jegxuyrgglagixkqamfhnvm