From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both

more »

... terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory. Index Terms-2-D semiconductor, carbon, CMOS, deep submicrometer, FinFET, graphene, MoS2, resistive random access memory (RRAM), silicon-on-insulator (SOI), thin film, total ionizing dose (TID), ultrathin buried oxide (UTBOX).