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Characterization of Electronic Transport through Amorphous TiO2 Produced by Atomic Layer Deposition
[component]
unpublished
The electrical transport in amorphous titanium dioxide (a-TiO 2 ) thin films deposited by atomic-layer deposition (ALD), and across heterojunctions of p + -Si|a-TiO 2 |metal substrates that had various top metal contacts, has been characterized by AC conductivity, temperaturedependent DC conductivity, space-charge-limited current (SCLC) spectroscopy, electron paramagnetic resonance (EPR), X-ray photoelectron spectroscopy (XPS), and current density versus voltage (J-V) characteristics. Amorphous
doi:10.1021/acs.jpcc.9b04434.s001
fatcat:25vlzih2uzfundem7sf23rsqou