Gate-All-Around Poly-Si TFTs With Single-Crystal-Like Nanowire Channels

Tsung-Kuei Kang, Ta-Chuan Liao, Chia-Min Lin, Han-Wen Liu, Fang-Hsing Wang, Huang-Chung Cheng
2011 IEEE Electron Device Letters  
The gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with single-crystal-like nanowire (NW) channels (SCLNCs) are demonstrated and characterized. Via the nanoscale nitride spacer, the Si NW can be easily transformed within one crystalline grain of the two-shot sequential-lateral-solidification poly-Si film. As compared with the planar ones, the GAA-SCLNC TFTs showed more excellent characteristics. The results clearly show that the variations of device characteristics can be reduced by
more » ... increasing the numbers of NWs in the channels and an average mobility above 410 cm 2 /V · s with a low standard deviation can be achieved for the GAA-SCLNC TFTs with 20-NW channels. Index Terms-Field-effect mobility, gate-all-around (GAA), nanowire (NW), nitride spacer, sequential lateral solidification (SLS), single-crystalline-like.
doi:10.1109/led.2011.2160146 fatcat:glrda7dlgfd6feqke6zq3cnmhu