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Gate-All-Around Poly-Si TFTs With Single-Crystal-Like Nanowire Channels
2011
IEEE Electron Device Letters
The gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with single-crystal-like nanowire (NW) channels (SCLNCs) are demonstrated and characterized. Via the nanoscale nitride spacer, the Si NW can be easily transformed within one crystalline grain of the two-shot sequential-lateral-solidification poly-Si film. As compared with the planar ones, the GAA-SCLNC TFTs showed more excellent characteristics. The results clearly show that the variations of device characteristics can be reduced by
doi:10.1109/led.2011.2160146
fatcat:glrda7dlgfd6feqke6zq3cnmhu