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A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing
2020
Materials Science-Poland
AbstractIn this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co2Si, Ni2Si, NiSi, NiSi2, CoSi2) is an annealing temperature dependent diffusion process. The
doi:10.2478/msp-2020-0057
fatcat:mxzjwgw6jfgklcdsohc3hmhm2i