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This paper presents two K-band low-noise amplifiers (LNAs) in 65-nm CMOS using the proposed RF junction varactors as the ESD protection devices. The junction varactors are customized for the RF ESD applications with accurate equivalent circuit models. The experimental results demonstrate excellent second breakdown currents ( 2 ) and high ratios of the ESD level to parasitic capacitances ( ESD ESD ). Using the dual-diode topology, the first LNA demonstrates an over 2-kV Human-Body-Model (HBM)doi:10.1109/tmtt.2011.2170582 fatcat:hctgza6pdfgkfdfaehp5iepgbe