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Local and Reversible Change of the Reconstruction on Ge(001) Surface betweenc(4×2) andp(2×2) by Scanning Tunneling Microscopy
2003
Journal of the Physical Society of Japan
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The reconstruction on Ge(001) surface is locally and reversibly changed between c(4x2) and p(2x2) by controlling the bias voltage of a scanning tunneling microscope (STM) at 80K. It is c(4x2) with the sample bias voltage V_b =< -0.7V. This structure can be kept with V_b =< 0.6V. When V_b is higher than 0.8V during the scanning, the structure changes to p(2x2). This structure is then maintained with V_b >= - 0.6V. The observed local change of the reconstruction with hysteresis is ascribed to
doi:10.1143/jpsj.72.2425
fatcat:rf4mkhthdbdyjcv3tecgfifabm