Silicon-on-Insulator Polarization Rotator Based on a Symmetry Breaking Silicon Overlay

Diedrik Vermeulen, Shankar Selvaraja, Peter Verheyen, Philippe Absil, Wim Bogaerts, Dries Van Thourhout, Gunther Roelkens
2012 IEEE Photonics Technology Letters  
We demonstrate a polarization rotator fabricated using a 4 etch-step complementary metal-oxide-semiconductor (CMOS)-compatible process including layer depositions on a silicon-on-insulator wafer. The measured polarization rotation efficiency is −0.51 dB over a wavelength range of 80 nm. A robustness investigation shows that the design is compatible with CMOS fabrication capabilities. Index Terms-Polarization rotator, silicon-on-insulator (SOI).
doi:10.1109/lpt.2011.2181944 fatcat:kthuwgcqabboblccwr3rsof6ua