Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices

R. P. Gupta, O. D. Iyore, K. Xiong, J. B. White, Kyeongjae Cho, H. N. Alshareef, B. E. Gnade
2009 Electrochemical and solid-state letters  
Sputtered Co is investigated as a suitable contact metal for bulk Bi 2 ͑Te,Se͒ 3 , and the results are compared to sputtered Ni. The coefficient of thermal expansion of Co matches that of bulk Bi 2 ͑Te,Se͒ 3 used in our study, and the compatible interface favors the selection of Co as a contact metal. Significant Ni diffusion into Bi 2 ͑Te,Se͒ 3 was observed. In contrast, Co on Bi 2 ͑Te,Se͒ 3 shows significantly less diffusion, even at anneal temperatures as high as 200°C. CoTe 2 is the
more » ... d phase that is formed. First principles calculations for Bi 2 Te 3 support the experimental observation. Figure 1. XRD spectra for the as-deposited 90 nm sputtered Co film taken at an X-ray incidence angle of = 2°and annealed film at 200°C for = 0.5, 1.0, and 2.0°. Electrochemical and Solid-State Letters, 12 ͑10͒ H395-H397 ͑2009͒ 1099-0062/2009/12͑10͒/H395/3/$25.00 © The Electrochemical Society H395 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 109.171.137.210 Downloaded on 2015-05-19 to IP
doi:10.1149/1.3196237 fatcat:qozka5od3jcjfhf4b4wuxzhlga