We study planar defects in epitaxial Co:ZnO dilute magnetic semiconductor thin films deposited on c-plane sapphire (Al 2 O 3 ), as well as the Co:ZnO/Al 2 O 3 interface, using aberration-corrected transmission electron microscopy and electron energy-loss spectroscopy. Co:ZnO samples that were deposited using pulsed laser deposition and reactive magnetron sputtering are both found to contain extrinsic stacking faults, incoherent interface structures, and compositional variations within the first

more »

... 3-4 Co:ZnO layers next to the Al 2 O 3 substrate. The stacking fault density is in the range of 10 17 cm À3 . We also measure the local lattice distortions around the stacking faults. It is shown that despite the relatively high density of planar defects, lattice distortions, and small compositional variation, the Co:ZnO films retain paramagnetic properties. V C 2013 AIP Publishing LLC.