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The Real Role of 4,4'-Bis[N-[4-{N,N-bis(3-methylphenyl)amino}phenyl]-N-phenylamino] biphenyl (DNTPD) Hole Injection Layer in OLED: Hole Retardation and Carrier Balancing
2014
Bulletin of the Korean Chemical Society (Print)
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We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus
doi:10.5012/bkcs.2014.35.3.929
fatcat:c52fjcmfyjbwtaaedho547i4ky