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Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics
We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ∼14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375λ∕n 3 , is a promising and efficient light source for silicon photonics.doi:10.1364/ol.38.004656 pmid:24322098 fatcat:twkh46zspbaw5mgdpn37ns4sli