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Atom-probe tomography has successfully mapped three-dimensional ͑3D͒ dopant atom distributions in nanoscale volumes of Si subjected to various processing procedures. The 3D evolution of dopants, specifically effects such as dopant clustering and grain-boundary segregation, were analyzed in implanted polycrystalline Si gate contacts and implanted shallow junctions. A cluster of dimensions 2 ϫ 7 ϫ 8 nm 3 and containing 264 B atoms, was identified at the intersection of three poly-Si grains,doi:10.1063/1.2005368 fatcat:hcyro5t7srftfho2o3h6tssgyu