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A general theoretical model for the infrared photothermal radiometric ͑PTR͒ signal from a semiconductor wafer is developed for the case of three-dimensional sample geometry with finite thickness. Carrier diffusion and heat conduction along the radial direction of the sample as well as along the thickness coordinate are taken into account. The simulated results for the modulation frequency dependence of the PTR signal amplitude and phase are applied to experimental data from Si wafers. Gooddoi:10.1063/1.369368 fatcat:zstqmgdrnrdkzbot6vrozenedi