Evolving conductive polymer neural networks on wetware

Megumi Akai, Naruki Hagiwara, Wataru Hikita, Masaru Okada, Yasumasa Sugito, Yuji Kuwahara, Tetsuya ASAI
2020 Japanese Journal of Applied Physics  
Neural networks in the brain are structured in three-dimensional (3-D) space, and the networks evolve through development and learning, whereas two-dimensional (2-D) crossbars have essentially been optimized for a fully connected neural network, which results in a significant increase in unused memristors. Here, we present a prototype of molecular neural networks on wetware consisting of a space-free synaptic medium immersed in monomer solution. In the medium, conductive polymer wires are grown
more » ... between multiple electrodes through learning only when necessary, i.e., no polymer wire is pre-placed, unlike present 2-D crossbar devices. Through experiments, we found the necessary growth conditions for synaptic polymer wires. We first demonstrated the learning of simple Boolean functions and then data-encoding tasks by using our system comprising the synaptic media and their external controllers. These results are valuable for expanding the concept of space-free synapse development, i.e., extending our 2-D synaptic media to 3-D is possible in principle. Introduction An artificial neural network (ANN) is one of the key components in recent artificial intelligence (AI) based on deep learning technologies, and is capable of performing a variety of computational tasks such as cognition, prediction, optimization, and intuitive representation 1,2 . Present digital computers based on von Neumann architectures are, however, not well-adapted to perform ANN computing because of the physical separation of the arithmetic and memory units 3,4 , which has increased the strong demand for acceleration of AI computing by using special hardware 5 . Among various AI accelerators, including present digital and analog AI accelerators built with silicon complementary metal-oxide semiconductor (CMOS) technologies 6 , a two-dimensional (2-D) array of memristors is one of the promising devices for area-and power-efficient edge-AI
doi:10.35848/1347-4065/ab8e06 fatcat:ig55g5s5grfwhotmmfubt6qs6i