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Hot-carrier effects in body-tied fin-type field effect transistors (FinFETs) are investigated. As the gate bias increases, coupling effects of two gates facing each other suppress the lateral channel electric field more effectively at double gate metal oxide FETs (MOSFETs) than at single gate MOSFETs. In double gate FinFETs, this effect is even further enhanced when the fin width is narrowed. The substrate current produced by an impact ionization process becomes large as fin width increases. Indoi:10.1143/jjap.45.3101 fatcat:yafivhbvezc27jel6cp74ppu2y