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Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
Room-temperature photoluminescence ͑PL͒ measurements are performed on GaInN/GaN multiple-quantum-well heterostructures grown on GaN-on-sapphire templates with different threading-dislocation densities. The selective optical excitation of quantum wells and the dependence of integrated PL intensity on excitation power allow us to determine the internal quantum efficiency ͑IQE͒ as a function of carrier concentration. The measured IQE of the sample with the lowest dislocation density ͑5.3ϫ 10 8 cmdoi:10.1364/cleo.2009.ctuf3 fatcat:xahlbhm2sbddjnmggwqjgpo2im