Internal Quantum Efficiency and Non-Radiative Recombination Coefficient of GaInN/GaN Multiple Quantum Wells with Different Dislocation Densities

Qi Dai, Martin F. Schubert, Min-Ho Kim, Jong Kyu Kim, E. F. Schubert, Daniel D. Koleske, Mary H. Crawford, Stephen R. Lee, Arthur J. Fischer, Gerald Thaler, Michael A. Banas
2009 Conference on Lasers and Electro-Optics/International Quantum Electronics Conference   unpublished
Room-temperature photoluminescence ͑PL͒ measurements are performed on GaInN/GaN multiple-quantum-well heterostructures grown on GaN-on-sapphire templates with different threading-dislocation densities. The selective optical excitation of quantum wells and the dependence of integrated PL intensity on excitation power allow us to determine the internal quantum efficiency ͑IQE͒ as a function of carrier concentration. The measured IQE of the sample with the lowest dislocation density ͑5.3ϫ 10 8 cm
more » ... sity ͑5.3ϫ 10 8 cm −2 ͒ is as high as 64%. The measured nonradiative coefficient A varies from 6 ϫ 10 7 to 2 ϫ 10 8 s −1 as the dislocation density increases from 5.3 ϫ 10 8 to 5.7ϫ 10 9 cm −2 , respectively.
doi:10.1364/cleo.2009.ctuf3 fatcat:xahlbhm2sbddjnmggwqjgpo2im