Fabrication of (Zn1^|^minus;xAlxO)5In2O3 by microwave irradiation and thermoelectric characterization

Tomoyuki ENDO, Jun FUKUSHIMA, Yamato HAYASHI, Hirotsugu TAKIZAWA
2013 Journal of the Ceramic Society of Japan  
The layer-structured thermoelectric material, Al-doped (ZnO) 5 In 2 O 3 , was fabricated by microwave irradiation within a short time of 15 min and its thermoelectric properties were examined. When comparing specimens sintered by microwave irradiation (15 min) with those by conventional heating (4 h), their microstructure and composition were similar. However, electrical conductivity was improved by microwave irradiation. Moreover, in (Zn 1¹x Al x O) 5 In 2 O 3 (x = 0.016, 0.032), Al-doping
more » ... ributed to an increase in both the electrical conductivity and the absolute value of Seebeck coefficient, which contributed fairly to the high dimensionless figure of merit, ZT. Larger ZT was achieved by improvement in electrical conductivity by microwave irradiation and increases in both the electrical conductivity and the absolute value of Seebeck coefficient by Al doping. (Zn 0.984 Al 0.016 O) 5 In 2 O 3 sintered by microwave irradiation had the highest ZT, which was 1.5 times higher than that of (ZnO) 5 In 2 O 3 sintered by conventional heating at 773 K.
doi:10.2109/jcersj2.121.416 fatcat:bldv3r2okra5djyqfnzvcqhnpm