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Positron Annihilation Spectroscopic Studies of Sintering Effect on Sol–Gel-Synthesized SiO2 Wide Band Gap Semiconductor Nanocrystals
2019
Current Science
Preserved Fulltext
Sol-gel procedure followed by sintering was used to prepare silica nanoparticles. Their structural properties were examined using XRD and HRTEM. Estimation of band gap and characterization of various type of defects were carried out by UV-Vis spectroscopy and positron annihilation spectroscopy. Though bulk SiO 2 is an insulator, calculated band gap was in the range of wide band gap semiconductor region. High value of positron lifetime indicated presence of void type defects on sintering in air.
doi:10.18520/cs/v117/i12/1990-1998
fatcat:b5j6faexqzh77mrpdbr24msmme