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Enhancement of quantum well intermixing on InP∕InGaAs∕InGaAsP heterostructures using titanium oxide surface stressors to induce forced point defect diffusion
2006
Applied Physics Letters
Preserved Fulltext
Francois, Alexandre; Aimez, V.; Beauvais, J.; Gendry, M.; Regreny, P. Enhancement of quantum well intermixing on InP/InGaAs/InGaAsP heterostructures using titanium oxide surface stressors to induce forced point defect diffusion, Applied Physics Letters, 2006; 89.
doi:10.1063/1.2364058
fatcat:nq7bqbhtvvcgpfsh4gmjx6d4uq