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Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
3) Sandis Nation4 Laboratories, P.O. Ror 6800, AlbuqUerQUe, NM 6718547552, U.3.A: (4) Siarirens Solar Industries, P.0. Box 6032, Camarillo, CA 93011, tJ.S.A. ABS rRACT An malylical procedure to extraa the surface rawnibitlalioii volocity of the SO& typo silicon interfoco, S$? from PC6 rnnasiiremenfs of emitter recombination currents is deswibd. The analyois shows that tho extracted values af + are significantly affected by the assumed marerial parameters for highly JopuJ silicon. tp,+" andd
doi:10.1109/wcpec.1994.520221
fatcat:wohfqgauqzfihmm7wbb3sg4nae