Orientation‐dependent phase modulation in InGaAs/GaAs multiquantum well waveguides

Utpal Das, Yi Chen, Pallab K. Bhattacharya, Paul R. Berger
1988 Applied Physics Letters  
The electro-optic effect and phase modulation in In o . 2 Ga ll . s As/GaAs multiple quantum wens have been experimentally studied for the first time. The experiments were done with 1.06 and 1.15 fim photoexcitation which are, respectively, 25 and 115 meV below tbe electron-heavy hole excitonic resonance. Strong quadratic electro-optic effect was observed near the excitonic edge in addition to the linear effect. These are characterized by 1'63 = .. ~ 1.85 X 10 -IY m/Y and (R33 -R 13 ) = 2.9 X
more » ... 3 -R 13 ) = 2.9 X 10 -19 m 2 /y2. In addition, we observe a dispersion in the value of 1'0' The relative phase shifts are higher in the strained system at 1.06 f1m than in lattice-matched GaAsl AIGaAs. "' Present address:
doi:10.1063/1.100295 fatcat:okstxwtjyndonhjuduxxlr4b54