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III-V semiconductor materials heteroepitaxially integrated with low-cost Si substrates present a potentially disruptive solar cell technology, providing the combination of highly efficient devices at low manufacturing cost, as well as being relevant to a wide range of other (opto)electronic applications. However, for the integration of materials with significant dissimilarities (e.g. lattice constant, crystal structure, bond chemistry, etc.), various detrimental defects can form and degradedoi:10.1017/s1431927616008539 fatcat:cseosvszbzdslcn33yi25jr7je