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Anisotropic photoluminescence of nonpolar ZnO epilayers and ZnO/Zn1-xMgxO multiple quantum wells grown on LiGaO₂ substrate

Tao Yan, L Trinkler, V Korsaks, C-Y Lu, B Berzina, Liuwen Chang, Mitch Chou, K Ploog
2020 Optics Express  

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The temperature-dependent polarized photoluminescence spectra of nonpolar ZnO samples were investigated by 263 nm laser. The degree of polarization (DOP) of m-plane quantum wells changes from 76% at 10 K to 40% at 300 K, which is much higher than that of epilayer. The strong anisotropy was presumably attributed to the enhanced confinement effect of a one-dimension confinement structure formed by the intersection of quantum well and basal stacking fault. The polarization of laser beam also has
more » ... influence on the DOP. It is assumed that the luminescence polarization should be affected not only by the in-plane strains but also the microstructural defects, which do modify the electronic band structure.
doi:10.1364/oe.385828 fatcat:bm7ffww7snbo3akj74a2gj6g6q
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Tao Yan, L Trinkler, V Korsaks, C-Y Lu, B Berzina, Liuwen Chang, Mitch Chou, K Ploog. "Anisotropic photoluminescence of nonpolar ZnO epilayers and ZnO/Zn1-xMgxO multiple quantum wells grown on LiGaO₂ substrate." Optics Express 28.4 (2020)