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Physics and Simulation of Optoelectronic Devices XII
This paper discusses the design and the internal device physics of novel high-performance vertical-cavity surfaceemitting lasers (VCSELs) emitting at 1.32 µm wavelength. Our VCSEL design features intra-cavity ring contacts, strain-compensated AlGaInAs quantum wells, and an AlInAs/InP tunnel junction. The tunnel junction is laterally confined forming an aperture for current injection and wave guiding. Undoped AlGaAs/GaAs mirrors are bonded on both sides to the InP-based active region. Thesedoi:10.1117/12.543062 fatcat:eqz2yasonrd63pf4cvausaqym4