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Performance of new self-aligned InP/InGaAs HBT's using crystallographically defined emitter contact technology
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)
The performance of InPDnGaAs heterojunction bipolar transistors (HBT's), fabricated using a new crystallographically defined emitter contact technology, is investigated. In this technology, a new self-alignment process has been developed based on the crystallographic wet etching characteristics of an InP dummy emitter layer according to the crystal orientations. The shape of the emitter electrode, which is determined by the crystallographically etched sidewall of the InP dummy emitter layer, is
doi:10.1109/iciprm.2001.929097
fatcat:a4g67hmeenh7lpy3ky7nfzwsbe