Ballistic charge transport in chiral-symmetric few-layer graphene
W.-R. Hannes, M. Titov
2010
Europhysics letters
A transfer matrix approach to study ballistic charge transport in few-layer graphene with chiral-symmetric stacking configurations is developed. We demonstrate that the chiral symmetry justifies a non-Abelian gauge transformation at the spectral degeneracy point (zero energy). This transformation proves the equivalence of zero-energy transport properties of the multilayer to those of the system of uncoupled monolayers. Similar transformation can be applied in order to gauge away an arbitrary
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... netic field, weak strain, and hopping disorder in the bulk of the sample. Finally, we calculate the full-counting statistics at arbitrary energy for different stacking configurations. The predicted gate-voltage dependence of conductance and noise can be measured in clean multilayer samples with generic metallic leads.
doi:10.1209/0295-5075/89/47007
fatcat:x4kfytevqrdenfhgp2lv6dbmtu