The use of the back surface field BSF within the thin film cells isn't elaborated in a current state of research. In this article we try to adapt it to the Cu(In,Ga)Se 2 thin film solar cells. The theoretical study is based on the resolution in one dimension of the equations which govern the behaviour of a photovoltaic cell. The spectrum used is the AM 1.5. The experimental method takes into account all physical phenomena which happen in the solar cell. The comparison of the macroscopic

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... parameters of the two cells with BSF and without BSF enabled us to obtain a conversion efficiency of 21.95% for the cell with BSF whereas it is equal to 20.78% for the cell without BSF. The use of the BSF presents a broad maximum absorption band which extends from 0.4µm to 1µm through the study of the quantum efficiency of the cell. The spectral response of the layer reaches a value of 0.7A.W -1 for an incidental wavelength of approximately 1000nm which corresponds to the gap of the absorber of the solar cell of 1.2eV. The improvement of the thickness of the p+ CIGS up-doped, indicates an optimal thickness of 0.5.µm.We find for this thickness an open circuit voltage of 0.71V, a short-circuit current density of 37.409mA.cm -2 and a conversion efficiency of 21.95%. The optimization of the doping concentration acceptors of the p+ CIGS, shows that the optimal concentration corresponds to 10E18cm -3 . We find with this acceptors density an open circuit voltage of 0.69V, a short circuit current density of 37.40mA.cm -2 and a conversion efficiency of 21.74%.